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2fach-Silizium-PIN Fotodiode in SMT 2-Chip Silicon PIN Photodiode in SMT KOM 2125 KOM 2125 FA
KOM 2125
KOM 2125 FA
Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm und bei 880 nm (KOM 2125 FA) * Kurze Schaltzeit (typ. 25 ns) * geeignet fur Vapor-Phase Loten und IR-Reflow-Loten * SMT-fahig Anwendungen * * * * Nachlaufsteuerungen Kantenfuhrung Industrieelektronik Messen/Steuern/Regeln" Bestellnummer Ordering Code Q62702-K0047 Q62702-P5313
Features * Especially suitable for applications from 400 nm to 1100 nm and of 880 nm (KOM 2125 FA) * Short switching time (typ. 25 ns) * Suitable for vapor-phase and IR-reflow soldering * Suitable for SMT Applications * * * * Follow-up controls Edge drives Industrial electronics For control and drive circuits
Typ Type KOM 2125 KOM 2125 FA
2001-02-21
1
KOM 2125, KOM 2125 FA
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Kennwerte (TA = 25 C) Characteristics (TA = 25 C) Bezeichnung Parameter Fotostrom Photocurrent VR = 5 V, Normlicht/standard light A T = 2856 K, Ev = 1000 Ix VR = 5 V, = 870 nm,Ee = 1mW/cm2 Symbol Symbol KOM 2125 Wert Value KOM 2125 FA Einheit Unit Symbol Symbol Wert Value - 40 ... + 80 60 150 Einheit Unit C V mW
Top; Tstg VR Ptot
Diode A Diode B Diode A Diode B
IP IP
S max
40 (> 30) 100 (> 75) - - 850 400 ... 1100
- - 26 (> 20) 70 (> 50) 900 750 ... 1100
A A nm nm
Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Diode A Diode B Diode A Diode B
A
4 10 2x2 2x5 0.3 60 5 ( 30) 10 ( 30)
4 10 2x2 2x5 0.3 60 5 ( 30) 10 ( 30)
mm2
LxB LxW H
mm x mm mm x mm mm Grad deg. nA
Abstand Chipoberflache zu Verguoberflache Distance chip front to case seal Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Diode A Diode B
IR
2001-02-21
2
KOM 2125, KOM 2125 FA
Kennwerte (TA = 25 C) Characteristics (TA = 25 C) (cont'd) Bezeichnung Parameter Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A Ee = 1 mW/cm2, = 850 nm Kurzschlussstrom Short-circuit current Normlicht/standard light A T = 2856 K, Ev = 1000 Ix = 870 nm, Ee = 1 mW/cm2 Anstiegszeit/Abfallzeit Rise and fall time RL = 50 ; VR = 5 V; = 850 nm; IP = 800 A Symbol Symbol KOM 2125 Wert Value KOM 2125 FA Einheit Unit
VO VO
350 (> 300) -
- 350 (> 300)
mV mV
Diode A Diode B Diode A Diode B Diode A Diode B
ISC ISC t r, t f
38 95 - - 18 25
- - 24 66 18 25
A A ns
Durchlassspannung, IF = 100 mA; E = 0 Forward voltage Kapazitat Capacitance VR = 0 V; f = 1 MHz; E = 0 Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von IP Temperature coefficient of IP Normlicht/standard light A = 850 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Diode A Diode B Diode A Diode B Diode A Diode B
VF C0
1.0 40 100 - 2.6
1.0 40 100 - 2.6
V pF
TCV
mV/K
TCI
0.18 - 6.4 x 10- 14 9.1 x 10- 14 3.1 x 1012 3.5 x 1012
- 0.2 6.4 x 10- 14 9.1 x 10- 14 3.1 x 1012 3.5 x 1012
%/K
NEP
W ----------Hz cm x Hz ------------------------W
D*
2001-02-21
3
KOM 2125, KOM 2125 FA
Relative Spectral Sensitivity KOM 2125, Srel = f () Relative Spectral Sensitivity KOM 2125 FA, Srel = f ()
100 Srel % 80 70 60 50 40 30 20 10 0 400 600 800 1000 nm 1200
OHF01430
Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev)
Dark Current, IR = f (VR), E = 0 normalized to 10 V/25 C
Capacitance C = f (VR), f = 1 MHz, E = 0
Dark Current IR = f (TA), VR = 10 V, E = 0, normalized to TA = 25 C
Directional Characteristics Srel = f ()
40 30 20 10
Total Power Dissipation
Ptot = f (TA)
0 1.0
OHF01402
50 0.8 60
0.6
70
0.4
80
0.2 0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-02-21
4
KOM 2125, KOM 2125 FA
Mazeichnung Package Outlines
6.7 (0.264) 6.2 (0.244)
Photosensitive area A = 2 (0.079) x 2 (0.079) B = 5 (0.197) x 2 (0.079) 0.9 (0.035) 0.7 (0.028) 5.2 (0.205) 2
A B
Chip position 0...0.1 (0...0.004) 0.3 (0.012) Active area 1.2 (0.047) 1.1 (0.043)
GEOY6860
3
Cathode
8.2 (0.323)
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 5
4.3 (0.169)
1 8.5 (0.335)
1.4 (0.055) 0.2 (0.008) 4.5 (0.177)
5.0 (0.197)

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